SW030R04VLT

SW030R04VLT N-Channel Trench Mosfet

Features

High ruggedness
Low RDS(ON) (Typ 3.9mΩ)@VGS=4.5V
(Typ 2.9mΩ)@VGS=10V
Low Gate Charge (Typ 141nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Synchronous Rectification, Li Battery Protect Board, Motor Drives

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

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Samwin SW030R04VLT N-channel Enhanced mode TO-252 MOSFET

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