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SW062R08E8T

SW062R08E8T N-Channel Trench Mosfet

Features

  • High ruggedness

  • Low RDS(ON) (Typ 6.0mΩ)@VGS=10V

  • Low Gate Charge (Typ 141nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, inverter


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW062R08E8T N-channel Enhanced mode TO-252 MOSFET

Samwin SW062R08E8T N-channel Enhanced mode TO-252 MOSFET

Samwin SW062R08E8T N-channel Enhanced mode TO-252 MOSFET

Samwin SW062R08E8T N-channel Enhanced mode TO-252 MOSFET

Samwin SW062R08E8T N-channel Enhanced mode TO-252 MOSFET

Samwin SW062R08E8T N-channel Enhanced mode TO-252 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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