Jul 09 , 2024
▍ N-channel Enhancement mode TO-220F/TO-220 MOSFET
Features:
⚫ High ruggedness
⚫ RDS(ON) (Typ 0.46Ω)@VGS=10V
⚫ Gate Charge (Typ 47nC)
⚫ Improved dv/dt Capability
⚫ 100% Avalanche Tested
⚫ Application:LED,Charger
General Description
This power MOSFET is produced with advanced technology of SAMWIN.This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
DISCLAIRATION:
- All the data&curve within this document was tested in SEMIPOWER TESTING&APPLICATION CENTER.
- This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
- Qualification Standards can also be found on the Web site www.samwinsemi.com.
- Any advice, please send your proposal to sales@samwinsemi.com.
Contact information：
SEMIPOWER TECHNOLOGY CO., LTD.
Add：15F, A Block, Cyber Tower, Tianan Cyber Park, Futian District, Shenzhen 518042 Guangdong, China
TEL：+86-29-8825 1977, +86-755-8398 1818
Sales Dept：+86-135 1029 2288, +86-135 1028 2288
Email：sales@samwinsemi.com
http://www.samwinsemi.com
