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SW6N80P

Samwin N-Channel Planar MOSFET

Features

  • High ruggedness

  • Low RDS(ON) (Typ 2.3Ω)@VGS=10V

  • Low Gate Charge (Typ 20nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: LED, Charger, PC Power


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW6N80P N-channel Enhanced mode TO-252 MOSFET

Samwin SW6N80P N-channel Enhanced mode TO-252 MOSFET

Samwin SW6N80P N-channel Enhanced mode TO-252 MOSFET

Samwin SW6N80P N-channel Enhanced mode TO-252 MOSFET

Samwin SW6N80P N-channel Enhanced mode TO-252 MOSFET

Samwin SW6N80P N-channel Enhanced mode TO-252 MOSFET


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