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SW7N65M

Samwin N-Channel Planar MOSFET

Features

  • High ruggedness

  • Low RDS(ON) (Typ 1.2Ω)@VGS=10V

  • Low Gate Charge (Typ 23nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: LED, Charger, PC Power


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW7N65M N-channel Enhanced mode TO-251N/TO-252/TO-220F/DFN5*6 MOSFET

Samwin SW7N65M N-channel Enhanced mode TO-251N/TO-252/TO-220F/DFN5*6 MOSFET

Samwin SW7N65M N-channel Enhanced mode TO-251N/TO-252/TO-220F/DFN5*6 MOSFET

Samwin SW7N65M N-channel Enhanced mode TO-251N/TO-252/TO-220F/DFN5*6 MOSFET

Samwin SW7N65M N-channel Enhanced mode TO-251N/TO-252/TO-220F/DFN5*6 MOSFET

Samwin SW7N65M N-channel Enhanced mode TO-251N/TO-252/TO-220F/DFN5*6 MOSFET


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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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