ES1AL~ES1JL
FEATURESEasy pick and placeFor surface mounted applicationsLow profile packageBuilt-in strain reliefSuperfast recovery times for high efficiencyMECHANICAL DATACase: SOD-123FLTerminals: Solderable per ...
SW016R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.2mΩ)@VGS=4.5V RDS(ON) (Typ 1.6mΩ)@VGS=10VLow Gate Charge (Typ 205nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificati...
SW5N65K3
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.8Ω)@VGS=10VLow Gate Charge (Typ 10nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
Our History
SOP-8 High Voltage High Current Mosfet
BrandSAMWINMountingSurface MountPins8Weight(typ.)85 (mg)Packing MethodEmbossed TapeMinimum Quantity3000 pcs/TubePackage Dimensions
Xi'an Longmen Action Plan TOP20 in 2019--SEMIPOWER
Global Venture Capital Summit 2019 was opened in Xi’an on Aug. 29, 2019 to set up aseamless channel between enterprises, industries and capital and gather trillions of capital for the development of ...
The First Chinese scientist to win the International Power Semiconductor Pioneer Award
News came from the 27th International Annual Conference on Power Semiconductor Devices and Integrated Circuits, the top academic annual conference in the field of power semiconductors held recently. P...
SS52~SS520
Surface Mount Schottky Barrier RectifierReverse Voltage - 20 to 200 VForward Current - 5.0AFeatures*Metal silicon junction, majority carrier conduction*For surface mounted applications*Low power loss,...
SW20N50B
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.2Ω)@VGS=10VLow Gate Charge (Typ 52nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
Small Signal Schottky Diode
Adapter
In a competitive adapter market focused on small size and low cost, SEMIPOWER aims to lower customer expenses while enhancing product reliability, offering cost-effective semiconductor devices for various applications.
1N4001W~1N4007W
FEATURESFor surface mounted applicationsLow profile packageGlass Passivated Chip Junctionldeal for automated placementLead free in comply with EU RoHS 2011/65/EU directivesMECHANICAL DATACase: SOD-123...
ES1AF~ES1JF
FEATURESFor surface mounted applicationsLow profile packageGlass Passivated Chip JunctionSuperfast reverse recovery timeLead free in comply with EU RoHS 2011/65/EU directivesMECHANICAL DATACase: SMAFT...
SW051R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 7.3mΩ)@VGS=4.5V RDS(ON) (Typ 4.7mΩ)@VGS=10VLow Gate Charge (Typ 43nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificati...
SW20N50D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
