On July 21, Samsung Electronics announced that it has begun mass production of 40nm 2Gb DDR3 Dram. This is the first time in the world that this level of product has entered mass production. At the same time, this product has higher mass production than the 50-nanometer product that was mass-produced in September last year.
It is reported that following Samsung Electronics' first mass production of 50nm DDR3 DRAM in the industry in September 2008, the company first developed 40nm 2Gb DDR3 DRAM in January 2009 and put it into mass production for the first time this month. Samsung Electronics has shortened production time by continuously simplifying production processes, greatly improving production efficiency and cost competitiveness.
Samsung Electronics said that the new generation of mass-produced 40-nanometer products has a higher level of technology and environmentally friendly solutions and will receive a higher market evaluation than 50-nanometer products. At the same time, in order to further expand the DDR3 memory market, Samsung Electronics will provide more efficient memory products for regional servers (16G or 8G memory), small servers, personal desktops (4G memory), notebook computers (4G memory), etc. in the future.
Data provided by Isupply, a semiconductor market research organization, indicates that DDR3 products will grow from 20% of the overall DRAM market currently to 82% in 2012. 2G DDR3 products will account for 5% of the overall DDR3 market currently to 82% in 2012. As the world's second-largest semiconductor manufacturer known for its production of Dram products, Samsung Electronics has ensured its dominant position in the memory market by continuously taking the lead in developing a new generation of higher-capacity and higher-performance Dram products in the industry.
