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Semipower Super-Junction Mos Product SW7N65K Won the 2016 IC Design Achievement Award

On March 14, 2016, the 2016 Greater China IC Design Achievement Award Ceremony was held grandly at the Shanghai Guofeng Hotel. This award conducts an annual industry status survey for IC design companies in Greater China (Mainland China, Taiwan and Hong Kong) and evaluates excellent IC design companies, semiconductor front-end manufacturing, EDA tools and IP service companies that provide quality services to the IC design industry. Selection and recognition. After a majority of design engineers voted, Semipower's super-junction MOS product SW7N65K was selected as the Best Power Device/Driver Chip/LED Driver IC Award of the 2016 Greater China IC Design Achievement Award. Semipower R & D Director Dr. Liu Xia came to the scene to receive the award.


Semipower R&D Director Dr. Liu Xia (second from left) went to the scene to receive the award

Semipower R & D Director Dr. Liu Xia (second from left) went to the scene to receive the award


At the same time, this award ceremony invited industry leaders and authoritative experts to the scene to conduct in-depth discussions on hot topics and future development of the semiconductor industry, providing an excellent opportunity for face-to-face communication with peers in the industry. The IC Design Achievement Award is the highest award in the IC industry in Greater China. The super-junction MOS product SW7N65K won the honor this time, which strongly proves the outstanding contribution of this product in leading electronic design innovation in Greater China. Semipower will spare no effort to break through innovation and strive to design more high-performance and high-quality products!


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