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SW016R03VLT

SW016R03VLT N-Channel Trench Mosfet

Features

  • High ruggedness

  • Low RDS(ON) (Typ 2.0mΩ)@VGS=4.5V

            RDS(ON) (Typ 1.4mΩ)@VGS=10V

  • Low Gate Charge (Typ 201nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, Motor Drives


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW016R03VLT N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW016R03VLT N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW016R03VLT N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW016R03VLT N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW016R03VLT N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW016R03VLT N-channel Enhanced mode DFN5*6 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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