SW085R06V7T

SW085R06V7T N-Channel Trench Mosfet

Features

High ruggedness
Low RDS(ON) (Typ 10.5mΩ)@VGS=4.5V
(Typ 8.0mΩ)@VGS=10V
Low Gate Charge (Typ 66nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Synchronous Rectification, Li Battery Protect Board, inverter

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

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Samwin SW085R06V7T N-channel Enhanced mode TO-220 MOSFET

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