SW040R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.6mΩ)@VGS=4.5V (Typ 4.4mΩ)@VGS=10VLow Gate Charge (Typ 59nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW2N60DB
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW4N65K
FeaturesHigh ruggednessLow RDS(ON) (Typ 1Ω)@VGS=10VLow Gate Charge (Typ 13nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, Adaptor, TV-PowerGeneral DescriptionThis power MO...
News! Our Team of Expert Consultants Has Grown Again
On the morning of September 7, 2018, our chairman Mr. Luo Yi, deputy general manager Ms. Li Linfei, and school-enterprise cooperation project leader Ms. Feng Wanqing went to the School of Automation a...
The LED National Standard Is About to Come Out, and the Lighting Industry Is About to Be Reshuffled
The formulation of LED national standards is in progress in an orderly manner, and the draft standard is currently basically completed. During this standard-setting process, 5 companies in Guzhen Town...
SW043R08ES
Features：High ruggednessLow RosoN (Typ 4.6mΩ)@Ves=10VLow Gate Charge (Typ 48nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
SW065R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.6mΩ)@VGS=10VLow Gate Charge (Typ 33nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor D...
SW15N70J
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.22Ω)@VGS=10VLow Gate Charge (Typ 29nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
Heavy! 2018 Xi'an Future Stars TOP100 List Announced
In 2018, look for the companies with the most investment value in Xi'an and discover the future stars of Xi'an companies!Today's Greater Xi'an is in a golden period of overlapping oppo...
The Power Semiconductor Device Market is Experiencing a Turning Point
Affected by problems such as slowing market demand and inventory adjustments, China's power device market growth rate dropped significantly in 2007 compared with 2006. Market sales were 76.23 bill...
SW036R08ES
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
SW1N60M
FeaturesHigh ruggednessLow RDS(ON) (Typ 7.7Ω)@VGS=10VLow Gate Charge (Typ 6nC)lmproved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is ...
SW040R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.5mΩ)@VGS=4.5V (Typ 4.0mΩ)@VGS=10VLow Gate Charge (Typ 59nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW1N60DC
N-channel Enhanced mode TO-252/SOT223 MOSFETFeatures：⚫ High ruggedness⚫ Low RDS(ON) (Typ 7Ω)@VGS=10V⚫ Low Gate Charge (Typ 7nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Tested⚫ Application:Charge...
SW4N70K2
