Semipower C Position Debuted at the 2018 Global Hard Technology Innovation Cooperation Conference
On November 8, under the guidance of the National Development and Reform Commission, the Ministry of Science and Technology, the Ministry of Industry and Information Technology, the Chinese Academy of...
Analysis of Current Situation and Trends of China's Semiconductor Industry
At the exchange dinner held on the 27th of this month, "China Semiconductor Association of North America visited "IT Times - Global Semiconductor Development Trends and Domestic Market Hotsp...
SW083R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
SW040R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.1mQ)@VGS=4.5V (Typ 3.7mΩ)@VGS=10VLow Gate Charge (Typ 59nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Recti...
SW7N65K
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.5Ω)@VGS=10VLow Gate Charge (Typ 21nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
Warmly Welcome Hangzhou Changchuan Technology Co., Ltd. to Visit Semipower
On October 23, 2018, three people including Mr. Zhong from Hangzhou Changchuan Technology Co., Ltd. visited Chippower Technology for a visit and exchange. Mr. Yang Qingyu, deputy general manager of Ch...
China's Discrete Device Application Scale Will Reach Us$17 Billion in 2008
According to statistics from the Ministry of Information Industry, from January to October this year, mainland China has produced 199.5 billion semiconductor discrete devices, a year-on-year increase ...
SW083R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
SW4N60M
FeaturesHigh ruggednessLow RDS(ON) (Typ 2Ω)@VGS=10VLow Gate Charge (Typ 13.5nC)lmproved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW030R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.8mΩ)@VGS=4.5V (Typ 3.3mΩ)@VGS=10VLow Gate Charge (Typ 80nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW4N60D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent valanche characteristics.
SW4N65K2
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.10Ω)@VGS=10VLow Gate Charge (Typ 7.1nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, AdaptorGeneral DescriptionThis power MOSFET i...
Warmly Welcome Shanghai Tuzheng Information Technology Co., Ltd. to Visit Semipower
On October 16, 2018, three people including Mr. Liu Jun, Chairman of Shanghai Tuzheng Information Technology Co., Ltd., Mr. Ding Pu, Director, and Mr. An Wenping, Vice President of Strategic Investmen...
The Development of MOSFET and the Factory-Free Model
John Bende, vice president of low-power products at Fairchild Semiconductor, believes: "Surface mount MOSFETs are replacing similar products in the past, allowing end product manufacturers to gai...
SW052R06VS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
