SW025R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.1mΩ)@VGS=4.5V (Typ 2.8mΩ)@VGS=10VLow Gate Charge (Typ 89nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW13N65K2
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.24Ω)@VGS=10VLow Gate Charge (Typ 28nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, AdaptorGeneral DescriptionThis power MOSFET is...
Japan NEXTY Electronics Corporation Visits Semipower
On December 6, 2018, Mr. Yoshinobu Ezo, the representative of PPL Co., Ltd., a wholly-owned subsidiary of NEXTY Electronics Corporation of Japan, visited Chippower Technology. Our deputy general manag...
Intel Dalian Chip Factory Will Officially Start Production Next Year
Recently, at the "Intel Cup" first Tsinghua University Innovation and Entrepreneurship Practice Summer Camp and the "Intel Global Technology Entrepreneurship Challenge" China selec...
SW210R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
SS12F~SS120F
Surface Mount Schottky Barrier RectifierReverse Voltage -20 to 200 VForward Current -1.0 AFEATURESMetal silicon junction, majority carrier conductionFor surface mounted applicationsLow power loss, hig...
SW830M
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.26Ω)@VGS=10VLow Gate Charge (Typ 14nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW030R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.4mΩ)@VGS=4.5V (Typ 3.0mΩ)@VGS=10VLow Gate Charge (Typ 79nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW830D1
▍ N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F MOSFETFeatures:⚫ High ruggedness⚫ Low RDS(ON) (Typ 1.33Ω)@VGS=10V⚫ Low Gate Charge (Typ 17nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche T...
SW14N65KL
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.25Ω)@VGS=10VLow Gate Charge (Typ 21nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
Huawei Product Technical Cooperation Procurement Certification Department Visited Semipower
On November 29, 2018, Dr. Feng Jianxiong (Director) of Huawei's Product Technical Cooperation Procurement Certification Department and three other people visited Chippower Technology. Our company&...
The First Domestic LED Industry Standards Alliance Was Established
Recently, 42 key semiconductor lighting (LED) industry-university-research units in Shenzhen signed a standards alliance agreement. The alliance companies will jointly develop alliance standards, impr...
SW030R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
DS12W~DS120W
Surface Mount Schottky Barrier RectifierReverse Voltage -20 to 200 VForward Current -1.0 AFEATURES*Metal silicon junction, majority carrier conduction*For surface mounted applications*Low power loss, ...
SW020R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.4mΩ)@VGS=4.5V (Typ 1.9mΩ)@VGS=10VLow Gate Charge (Typ 143nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
