Semipower Superjunction Field Effect Transistor SW47N65KF Won the 'Automotive Electronics Science and Technology Innovation Product Award'
An annual event that is widely watched by China's automotive industry and media circles, the "Oscar" award for the automotive electronics industry hosted by the Shenzhen Automotive Elect...
SW038R13E8S-1
FeaturesHigh ruggednessLow RoscN (Typ 3.4mΩ)@Ves=10VLow Gate Charge (Typ 156nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
SW046R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.3mΩ)@VGS=10VLow Gate Charge (Typ 144nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
Semipower Won the '2015-2016 China Semiconductor Market Trustworthy Brand Award'
On March 24-25, 2016, the "2016 China Semiconductor Market Annual Conference and the Fifth Integrated Circuit Industry Innovation Conference (IC Market China 2016)" was jointly hosted by the...
SW043R15E8S
FeaturesHigh ruggednessLow RosoN (Typ 4.1mΩ)@Ves=10VLow Gate Charge (Typ 154nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous RectifcationLi Battery Protect Board, Motor Drives
SW4N70L
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.8Ω)@VGS=10VLow Gate Charge (Typ 18nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW085R68E7T
Semipower Super-Junction Mos Product SW7N65K Won the 2016 IC Design Achievement Award
On March 14, 2016, the 2016 Greater China IC Design Achievement Award Ceremony was held grandly at the Shanghai Guofeng Hotel. This award conducts an annual industry status survey for IC design compan...
SW043R15E8S
FeaturesHigh ruggednessLow RoscN (Typ 3.6mΩ)@Ves=10VLow Gate Charge (Typ 162nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery Protect Board, Motor Drive...
SW7N80P
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.45Ω)@VGS=10VLow Gate Charge (Typ 28nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW086R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 9.2mΩ)@VGS=10VLow Gate Charge (Typ 64nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Inverte...
The 13th China International Semiconductor Expo and Summit Forum
The 13th China International Semiconductor Expo and Summit Forum (IC China 2015) was held from November 11 to 13, 2015 in Hall W5 of Shanghai New International Expo Center. "IC China 2015" t...
SW2800R15ES
FeaturesHigh ruggednessLow RoscN (Typ 208mΩ)@Ves=10VLow Gate Charge (Typ 5.2nC)Improved dv/dt Capability100% Avalanche TestedApplication:TV,LED
SW6N80P
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.3Ω)@VGS=10VLow Gate Charge (Typ 20nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW068R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.9mΩ)@VGS=10VLow Gate Charge (Typ 91nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
