SW050R95E8S
FeaturesHigh ruggednessLow RosoN (Typ 6.0mΩ)@Ves=10VLow Gate Charge (Typ 48nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
SW076R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 7.6mΩ)@VGS=10VLow Gate Charge (Typ 70nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Inverte...
Semipower Participated in the 2016 7th Automobile Charging Pile and Industrial Power Supply Magnetic Component Application Technology Seminar
In order to welcome the peak investment in charging piles in the second half of the year and help charging pile companies keep abreast of the latest power technology, the "Seventh Automobile Char...
SW050R95E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.8mΩ)@Ves=10VLow Gate Charge (Typ 50nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery Protect Board, inverter
SW10N70M
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.1Ω)@VGS=10VLow Gate Charge (Typ 30nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW050R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.3mΩ)@VGS=10VLow Gate Charge (Typ 130nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor ...
SW7N70D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Advanced Training Seminar on Component Quality Reliability Evaluation Application and Failure Analysis Technology Came to Semipower for Visit and Study
On October 24, 2016, the "Advanced Training Seminar on Component Quality Reliability Evaluation, Application and Failure Analysis Technology" was led by Xi'an University of Electronic Sc...
SW072R10VS
FeaturesHigh ruggednessLow RosoN (Typ 9.5mΩ)@Ves=4.5V(Typ 7.2mn)@Vas=10VLow Gate Charge (Typ 49nC)Improved dv/dt Capability100% Avalanche TestedApplicationSynchronous RectificationLi Battery Protect ...
SW062R68E7T
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resist...
Xi'an Teruid R & D Team Came to Semipower for Technical Training
On October 24, 2016, more than 30 R&D experts and technical backbones from the leading charging pile company Xi'an Triad went to the Semipower Power Device Testing and Application Center for e...
SW230R10VS
FeaturesHigh ruggednessLow RosoN (Typ 21.6mΩ)@Vas-4.5V(Typ 17.6mΩ)@Ves=10VLow Gate Charge (Typ 15nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Pro...
SW7N70M
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.2Ω)@VGS=10VLow Gate Charge (Typ 28nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW056R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.5mΩ)@VGS=10VLow Gate Charge (Typ 99nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
Shenzhen Jinruixian Inspection Team Visited Semipower
On September 22, 2016, Shenzhen Jinruixian Digital Technology Co., Ltd. Vice President Ding Zhiyong, Hardware Center Director Zhong Jun, and Purchasing Manager Ganmei visited Semipower for supplier qu...
