SW4N65M
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.1Ω)@VGS=10VLow Gate Charge (Typ 15nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW050R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.2mΩ)@VGS=10VLow Gate Charge (Typ 129nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
SW4N65DD
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Semipower Won the Excellent Product Award at the 2017 China (Shenzhen) International Automotive Electronics Industry Annual Conference
On March 28, 2017, the 2017 China (Shenzhen) International Automotive Electronics Industry Annual Conference was grandly held at the Four Points by Sheraton Hotel. This annual meeting attracted nearly...
SW030R10E8S
FeaturesHigh ruggednessLow RosoN (Typ 2.5mΩ)@Ves=10VLow Gate Charge (Typ 114nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
SW046R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.8mΩ)@VGS=10VLow Gate Charge (Typ 146nC)lmproved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
SW4N65D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Semipower Explores New Business Directions for Wireless Charging
Wireless charging, also known as induction charging and non-contact induction charging, uses near-field induction, that is, inductive coupling, to transmit energy from the charger to the electrical de...
SW064R10VLS
FeaturesHigh ruggednessLow RosoN (Typ 7.2mΩ)@Ves-4.5V(Typ 5.6mΩ)@Ves=10VLow Gate Charge (Typ 58nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Prote...
SW056R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.8mΩ)@VGS=10VLow Gate Charge (Typ 107nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
Mr. Li Chenguang, CTO of Yonglian Technology, Personally Visited Xi'an Semipower to Conduct Product Quality Control Research
On March 6, Mr. Li Chenguang, CTO of Yonglian Technology (stock code: 834160), made a special visit to Xi'an Semipower Electronic Technology Co., Ltd. and conducted a detailed on-site investigatio...
SW020R10E8S
FeaturesHigh ruggednessLow RoSoN (Typ 1.8mΩ)@Ves=10VLow Gate Charge (Typ 162nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
SW2N65B
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.2Ω)@VGS=10VLow Gate Charge (Typ 8.5nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW060R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.6mΩ)@VGS=10VLow Gate Charge (Typ 94nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
SW2N65DB
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
