SW036R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.2mΩ)@VGS=10VLow Gate Charge (Typ 172nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor ...
SW7N65DA
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Salcomp Technologies Co., Ltd. Visited Semipower for Annual Supervision and Audit
On May 10, 2017, Semipower ushered in the annual supervision audit by the audit team of Salcomp Technologies Co., Ltd. The members of the Salcomp audit team for this trip include supplier quality engi...
SW046R10ES
FeaturesHigh ruggednessLow RosoN (Typ 4.1mΩ)@Vas=10VLow Gate Charge (Typ 65nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
SW029R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.0mΩ)@VGS=10VLow Gate Charge (Typ 277nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor ...
SW7N65D
N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-251U/TO-252/TO-220F/TO-220SF/TO-262N/DFN5*6/TO-220FT MOSFETFeatures：⚫ High ruggedness⚫ Low RDS(ON) (Typ 1.1Ω)@VGS=10V⚫ Low Gate Charge (Typ 30nC)⚫ Imp...
Semipower Welcomes Xi'an Municipal Industry and Information Technology Commission IGBT R & D Project Review
On April 27, 2017, Semipower ushered in the Xi'an Municipal Industry and Information Technology Commission review team to review the IGBT power device R&D project applied to 1200V/900V/650V. M...
SW034R10ES
FeaturesHigh ruggednessLow RosoN (Typ 3.4mΩ)@Ves=10VLow Gate Charge (Typ 82nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
SW030R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.0mΩ)@VGS=10VLow Gate Charge (Typ 262nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor ...
SW6N65D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Semipower Reaches Cooperation Intention with Multiple Parties on Wireless Charging Project
Following Semipower and MAPS reaching a cooperation intention to jointly develop China's magnetic resonance wireless charging market project in March, the project has attracted the favor of many i...
SW064R10VLS
FeaturesHigh ruggednessLow RosN (Typ 7.2mΩ)@Ves=4.5V(Typ 5.6mΩ)@Ves=10VLow Gate Charge (Typ 58nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protec...
SW046R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.6mΩ)@VGS=10VLow Gate Charge (Typ 145nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
Semipower Won the 2017 Top Five Outstanding Technical Support IC Design Company Award in China
On March 24, 2017, "Electronic Engineering Special", "EDN Electronic Technology Design" and "International Electronic Business News" under AspenCore, the world's lead...
SW064R10VLS
FeaturesHigh ruggednessLow RosoN (Typ 8.1mΩ)@Ves=4.5V(Typ 6.6mΩ)@Vas=10VLow Gate Charge (Typ 58nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification.Li Battery Prote...
