SW050R85E7S
FeaturesHigh ruggednessLow RosoN (Typ 4.8mn)@Ves=10VLow Gate Charge (Typ 77nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Inverter
SW030R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.9mΩ)@VGS=4.5V (Typ 2.9mΩ)@VGS=10VLow Gate Charge (Typ 141nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
SW15N65D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Semipower Appears at IC China 2017
On October 25, the annual event China International Semiconductor Expo and Summit Forum (IC China 2017) opened grandly at the Shanghai New International Expo Center. As an international professional e...
SW050R85E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.3mΩ)@Vs=10VLow Gate Charge (Typ 44nC)lImproved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification.Li Battery Protect Board, inverter
SW047R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.9mΩ)@VGS=4.5V (Typ 4.3mΩ)@VGS=10VLow Gate Charge (Typ 91nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW12N65D
Features：High ruggedness，Low RDS(ON) (Typ 0.66Ω)@VGS=10V，Low Gate Charge (Typ 41nC)，Improved dv/dt Capability，100% Avalanche Tested，Application: LED , Charger, PC Power.
Focus on the 19th National Congress and Embark on a New Journey-Semipower Organizes Learning from the Spirit of the 19th National Congress
On October 24, Mr. Luo Yi, President of Semipower, had the honor to participate in the entrepreneur symposium held by the High-tech Zone Management Committee. Together with Secretary Li Yi, Director Y...
SW094R10VLS
FeaturesHigh ruggednessLow RoSoN (Typ 13.3mΩ)@Ves-4.5V(Typ 10mΩ)@Ves=10VLow Gate Charge (Typ 28nC)improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification.Li Battery Prote...
SW030R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.8mΩ)@VGS=4.5V RDS(ON) (Typ 2.9mΩ)@VGS=10VLow Gate Charge (Typ 143nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificat...
SW12N65D
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.7Ω)@VGS=10VLow Gate Charge (Typ 45nC)Improved dv/dt Capability100% Avalanche TestedApplication: Charger, LED, PC PowerGeneral DescriptionThis power MOSFET is...
Semipower Chairman Luo Yi was invited to attend the Xi'an High-tech Zone Entrepreneurs Forum
On the afternoon of October 24, 2017, the High-tech Zone held an entrepreneur symposium and invited the heads of 16 high-tech zone companies including Fast, Jinhua Investment Holdings, Tianhe Defense,...
SW072R10VS
FeaturesHigh ruggednessLow RosN (Typ 9.9mΩ)@Vas=4.5V(Typ 7.7mΩ)@Ves=10VLow Gate Charge (Typ 46nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protec...
SW080R06ET
FeaturesHigh ruggednessLow RDS(ON) (Typ 12.6mΩ)@VGS=10VLow Gate Charge (Typ 43nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
SW10N65D
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.9Ω)@VGS=10VLow Gate Charge (Typ 35nC)Improved dv/dt Capability100% Avalanche TestedApplication: UPS, inverter, PC-POWERGeneral DescriptionThis power MOSFET i...
