SW036R10E8S
FeaturesHigh ruggednessLow RoscN (Typ 3.8mΩ)@Ves=10VLow Gate Charge (Typ 87nC)Improved dv/dt Capability100% Avalanche TestedApplicationSynchronous Rectification,Li Battery Protect Board, Motor Drives
SW14N65M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.56Ω)@VGS=10VLow Gate Charge (Typ 44nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW120R06VLS
FeaturesHigh ruggednessLow RDS(ON) (Typ 12.6mΩ)@VGS=4.5V RDS(ON) (Typ 10mΩ)@VGS=10VLow Gate Charge (Typ 18nC)improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificati...
Congratulations on the Successful Convening of the Second JEDEC China TG meeting in 2017
The 2017 JEDEC International Standard China TG Second Working Conference organized by Semipower was successfully held at Qinghai Fuyin Changle International Hotel from July 20th to 21st!From Huawei, Z...
SW034R10ES
FeaturesHigh ruggednessLow RoscN (Typ 3.4mΩ)@Ves=10VLow Gate Charge (Typ 87nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
SW12N65M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.68Ω)@VGS=10VLow Gate Charge (Typ 37nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW085R06V7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 10.5mΩ)@VGS=4.5V (Typ 8.0mΩ)@VGS=10VLow Gate Charge (Typ 66nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
China Chip Bank Visits Semipower
On July 18, 2017, Mr. Sun Yong, Chairman of Beijing Xupu Technology Co., Ltd., a subsidiary of China Chip Bank, and Mr. Lan Huaiying, General Manager of Beijing Huaxin Micro Semiconductor Co., Ltd. vi...
SW046R10ES
FeaturesHigh ruggednessLow RosoN (Typ 4.3mΩ)@Ves=10VLow Gate Charge (Typ 63nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,.Li Battery Protect Board, Motor Driv...
SW10N65M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.9Ω)@VGS=10VLow Gate Charge (Typ 29nC)lmproved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW350R06VT
FeaturesHigh ruggednessLow RDS(ON)(Typ 37mΩ)@VGS=4.5V (Typ 32mΩ)@VGS=10VLow Gate Charge (Typ 21nC)Improved dv/dt Capability100% Avalanche TestedApplication: DC-DC Converter, Mot...
Semipower Successfully Passed Bull Group Supplier Audit
On July 6, Mr. Han Zhiyun, Quality Director of Bull Group, made a special trip to Xi'an Semipower Electronic Technology Co., Ltd. to conduct a detailed on-site supplier review of Xi'an Semipow...
SW046R10ES
FeaturesHigh ruggednessLow RosoN (Typ 4.5mΩ)@Vs=10VLow Gate Charge (Typ 64nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
SW8N65MA
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.04Ω)@VGS=10VLow Gate Charge (Typ 29nC)lmproved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW350R06VT
FeaturesHigh ruggednessLow RDS(ON) (Typ 38mΩ)@VGS=4.5V (Typ 33mΩ)@VGS=10VLow Gate Charge (Typ 21nC)Improved dv/dt Capability100% Avalanche TestedApplication: DC-DC Converter, M...
