Semipower Becomes the Fourth Batch of Municipal Technological Innovation Demonstration Enterprises in Xi'an
The identification standards for technological innovation demonstration enterprises are strict, requiring enterprises to have core competitiveness and industry leadership, continuous innovation capabi...
SW150R10VS
FeaturesHigh ruggednessLow RosoN (Typ 17.5mΩ)@Ves=4.5V(Typ 14.5mΩ)@Ves=10VLow Gate Charge (Typ 14.4nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery P...
SW8N65M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.88Ω)@VGS=10VLow Gate Charge (Typ 32nC)lmproved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW060R65E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.6mΩ)@VGS=10VLow Gate Charge (Typ 94nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
Semipower Joins Hands with Power Network and Keysight to Hold a National Tour Training Meeting for Engineers and It Comes to a Successful Conclusion
On June 18, 2017, the event "Take you into the most authoritative CNAS&ILAC certification laboratory in China - Xi'an Power Device Testing and Application Center" hosted by Power Sup...
SW012R10ES
FeaturesHigh ruggednessLow RosoN (Typ 1.3m)@Ves=10VLow Gate Charge (Typ 201nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification.Li Battery Protect Board, Motor Drives
SW8N65B
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.7Ω)@VGS=10VLow Gate Charge (Typ 27nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW075R68ET
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.9mΩ)@VGS=10VLow Gate Charge (Typ 77nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor D...
Emerson Network Power Primary Power President Fang Qiang Visits Semipower
On May 17, Mr. Fang Qiang, President of Primary Power Supply of Emerson Network Power Co., Ltd., and Mr. Liu Shanzhong, General Manager of Devices, visited Semipower. Mr. Fang and his party, accompani...
SW035R10ES
FeaturesHigh ruggednessLow RosoN (Typ 3.5mΩ)@Ves=10VLow Gate Charge (Typ 83nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
SW7N65M
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.2Ω)@VGS=10VLow Gate Charge (Typ 23nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW036R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.2mΩ)@VGS=10VLow Gate Charge (Typ 172nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor ...
SW7N65DA
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Salcomp Technologies Co., Ltd. Visited Semipower for Annual Supervision and Audit
On May 10, 2017, Semipower ushered in the annual supervision audit by the audit team of Salcomp Technologies Co., Ltd. The members of the Salcomp audit team for this trip include supplier quality engi...
SW046R10ES
FeaturesHigh ruggednessLow RosoN (Typ 4.1mΩ)@Vas=10VLow Gate Charge (Typ 65nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
