SW046R85E8S
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
SW040R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.7mΩ)@VGS=4.5V (Typ 3.9mΩ)@VGS=10VLow Gate Charge (Typ 56nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW7N80K3
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.54Ω)@VGS=10VLow Gate Charge (Typ 18nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
Semipower Won the '2018 China IC Design Achievement Award for Outstanding Market Performance Award: Automotive Electronics'
AspenCore, the world's largest media group in the field of electronic technology, grandly held the "2018 China IC Leadership Summit and China IC Design Achievement Award Ceremony" at the...
SW030R85E8S
Features:High ruggednessLow RosoN (Typ 3.3mΩ)@Ves=10VLow Gate Charge (Typ 85nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
SW4N65P
FeaturesHigh ruggednessLoW RDS(ON) (Typ 2.0Ω)@VGS=10VLow Gate Charge (Typ 15nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW065R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 9.1mΩ)@VGS=4.5V (Typ 6.1mΩ)@VGS=10VLow Gate Charge (Typ 35nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW6N80KL
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.72Ω)@VGS=10VLow Gate Charge (Typ 16nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
Semipower: Start Again for Love
Children, children in childhood, should be the treasures in the hands of parents. Childhood is beautiful, and children should be innocent, lively, and carefree.Most of the more than 100 students in Du...
SW023R85E8S
Features:High ruggednessLow RosoN (Typ 2.4mΩ)@Ves=10VLow Gate Charge (Typ 125nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous RectificationLi Battery Protect Board, Motor Driv...
SW16N65M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.43Ω)@VGS=10VLow Gate Charge (Typ 52nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW047R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.9mΩ)@VGS=4.5V (Typ 4.3mΩ)@VGS=10VLow Gate Charge (Typ 91nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW10N80K3
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.40Ω)@VGS=10VLow Gate Charge (Typ 42nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
Don't Forget Your Original Intention and Forge Ahead
On February 11, the Xi'an Investment Cooperation Committee grandly held the "New Era, New Economy, New Xi'an - Xi'an 2017 Investment Promotion Work Briefing and Investment Ambassador ...
SW010R85E8S
FeaturesHigh ruggednessLow RoscN (Typ 1.2mΩ)@Ves=10VLow Gate Charge (Typ 179nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery Protect Board, Motor Drive...
