SW230R10VS
FeaturesHigh ruggednessLoW RoSoN (Typ 21mQ)@Ves-4.5VRosN (Typ 17mQ)@Ves=10VLow Gate Charge (Typ 15nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery Prote...
SW7N70DA
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.5Ω)@VGS=10VLow Gate Charge (Typ 28nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW050R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.7mΩ)@VGS=10VLow Gate Charge (Typ 127nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
Huawei Device Department Leaders Visited Semipower for On-Site Review
On September 14 and September 22, 2016, Dai Yufeng, director of the device laboratory of Huawei's device department, and Ni Rinbo, manager of the energy and comprehensive device department, visite...
SW072R10VS
FeaturesHigh ruggednessLow RosoN (Typ 9.5mΩ)@Ves=4.5V(Typ 7.2mΩ)@Vas=10VLow Gate Charge (Typ 49nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Prote...
SW6N70M
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.5Ω)@VGS=10VLow Gate Charge (Typ 24nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW076R68E7T
SW6N70DA
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
The JEDEC JC-14 Committee Officially Authorized the Establishment of the China Task Force
From July 21st to 22nd, 2016, the JEDEC JC-14 China Task Force Working Conference was led by the Fifth Institute of Electronics of the Ministry of Industry and Information Technology and Huawei Techno...
SW038R13E8S
FeaturesHigh ruggednessLow Ros (Typ 2.9mΩ)@Ves=10VLow Gate Charge (Typ 151nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
SW062R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.1mΩ)@VGS=10VLow Gate Charge (Typ 100nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
SW6N70DB
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Semipower Superjunction Field Effect Transistor SW47N65KF Won the 'Automotive Electronics Science and Technology Innovation Product Award'
An annual event that is widely watched by China's automotive industry and media circles, the "Oscar" award for the automotive electronics industry hosted by the Shenzhen Automotive Elect...
SW038R13E8S-1
FeaturesHigh ruggednessLow RoscN (Typ 3.4mΩ)@Ves=10VLow Gate Charge (Typ 156nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
SW046R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.3mΩ)@VGS=10VLow Gate Charge (Typ 144nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
