Email Us

1N5817W~1N5819W

1N5817W~1N5819W Schottky Diode

FEATURES

Metal silicon junction, majority carrier conduction

Guarding for overvoltage protection

Low power loss, high efficiency

High current capability

Low forward voltage drop

High surge capability

For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications


MECHANICAL DATA

Case: SOD-123FL

Terminals: Solderable per MIL-STD-750, Method 2026

Approx.Weight: 15mg 0.00048oz


Samwin 1N5817W THRU 1N5819W

Samwin 1N5817W THRU 1N5819W

Samwin 1N5817W THRU 1N5819W

CONTACT US
We’re here to help. Fill out this brief form and a representative will contact you.
Related Schottky Diode
Quick Links
Contact Us
Address: E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
sales@samwinsemi.com
+86-755-83981818