Aug 10 , 2024
General Description：
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Features：
- High ruggedness
- Low RosoN (Typ 1.6mΩ)@Vas=4.5V (TyP 1.2mA)@Ves=10V
- Low Gate Charge (Typ 97nC)
- lmproved dv/dt Capability
- 100% Avalanche Tested
- Application:Synchronous Rectifcation Li Battery Protect Board, Motor Drives.
DISCLAIMER:
- All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER.
- This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
- Qualification standards can also be found on the Web site http://www.semipower.com.cn.
- Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com.
SEMIPOWER TECHNOLOGY CO., LTD.
