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SW025R03VT

SW025R03VT N-Channel Trench Mosfet

Features

  • High ruggedness

  • Low RDS(ON) (Typ 3.9mΩ)@VGS=4.5V

                           (Typ 2.6mΩ)@VGS=10V

  • Low Gate Charge (Typ 71nC)

  • lmproved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, Motor Drives


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW025R03VT N-channel Enhanced mode TO-252 MOSFET

Samwin SW025R03VT N-channel Enhanced mode TO-252 MOSFET

Samwin SW025R03VT N-channel Enhanced mode TO-252 MOSFET

Samwin SW025R03VT N-channel Enhanced mode TO-252 MOSFET

Samwin SW025R03VT N-channel Enhanced mode TO-252 MOSFET

Samwin SW025R03VT N-channel Enhanced mode TO-252 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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