Aug 10 , 2024
High ruggedness
Low RDS(ON) (Typ 0.34Ω)@VGS=10V
Low Gate Charge (Typ 18nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: LED, Charger, PC Power
This power MOSFET is produced with advanced super junction technology of SAMWIN
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
