SW068R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.9mΩ)@VGS=10VLow Gate Charge (Typ 91nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
SW058R15E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.4mΩ)@Ves=10VLow Gate Charge (Typ 163nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
SW10N80M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.86Ω)@VGS=10VLow Gate Charge (Typ 33nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW085R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 10.2mΩ)@VGS=10VLow Gate Charge (Typ 47nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
SW420R20ES
FeaturesHigh ruggednessLow RosoN (Typ 44mQ)@Ves=10VLow Gate Charge (Typ 17nC)improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
SW6N80MA
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.0Ω)@VGS=10VLow Gate Charge (Typ 27nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW086R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 9.6mΩ)@VGS=10VLow Gate Charge (Typ 66nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
SW10N80D
N-channel Enhanced mode TO-220F MOSFETFeatures：⚫ High ruggedness⚫ Low RDS(ON) (Typ 1.0Ω)@VGS=10V⚫ Low Gate Charge (Typ 55nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Tested⚫ Application:LED, Char...
SW076R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 7.9mΩ)@VGS=10VLow Gate Charge (Typ 78nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
SW7N80D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW058R72E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.3mΩ)@VGS=10VLow Gate Charge (Typ 107nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
SW7N80M
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.23Ω)@VGS=10VLow Gate Charge (Typ 23nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW058R72E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.6mΩ)@VGS=10VLow Gate Charge (Typ 109nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
SW6N80M
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.0Ω)@VGS=10VLow Gate Charge (Typ 17nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW058R75E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.3mΩ)@VGS=10VLow Gate Charge (Typ 107nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
