SW076R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 7.6mΩ)@VGS=10VLow Gate Charge (Typ 70nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Inverte...
SW050R95E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.8mΩ)@Ves=10VLow Gate Charge (Typ 50nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery Protect Board, inverter
SW10N70M
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.1Ω)@VGS=10VLow Gate Charge (Typ 30nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW050R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.3mΩ)@VGS=10VLow Gate Charge (Typ 130nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor ...
SW7N70D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW072R10VS
FeaturesHigh ruggednessLow RosoN (Typ 9.5mΩ)@Ves=4.5V(Typ 7.2mn)@Vas=10VLow Gate Charge (Typ 49nC)Improved dv/dt Capability100% Avalanche TestedApplicationSynchronous RectificationLi Battery Protect ...
SW062R68E7T
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resist...
SW230R10VS
FeaturesHigh ruggednessLow RosoN (Typ 21.6mΩ)@Vas-4.5V(Typ 17.6mΩ)@Ves=10VLow Gate Charge (Typ 15nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Pro...
SW7N70M
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.2Ω)@VGS=10VLow Gate Charge (Typ 28nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW056R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.5mΩ)@VGS=10VLow Gate Charge (Typ 99nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
SW230R10VS
FeaturesHigh ruggednessLoW RoSoN (Typ 21mQ)@Ves-4.5VRosN (Typ 17mQ)@Ves=10VLow Gate Charge (Typ 15nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery Prote...
SW7N70DA
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.5Ω)@VGS=10VLow Gate Charge (Typ 28nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW050R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.7mΩ)@VGS=10VLow Gate Charge (Typ 127nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
SW072R10VS
FeaturesHigh ruggednessLow RosoN (Typ 9.5mΩ)@Ves=4.5V(Typ 7.2mΩ)@Vas=10VLow Gate Charge (Typ 49nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Prote...
SW6N70M
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.5Ω)@VGS=10VLow Gate Charge (Typ 24nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
