SW076R68E7T
SW6N70DA
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW038R13E8S
FeaturesHigh ruggednessLow Ros (Typ 2.9mΩ)@Ves=10VLow Gate Charge (Typ 151nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
SW062R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.1mΩ)@VGS=10VLow Gate Charge (Typ 100nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
SW6N70DB
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW038R13E8S-1
FeaturesHigh ruggednessLow RoscN (Typ 3.4mΩ)@Ves=10VLow Gate Charge (Typ 156nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
SW046R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.3mΩ)@VGS=10VLow Gate Charge (Typ 144nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
SW043R15E8S
FeaturesHigh ruggednessLow RosoN (Typ 4.1mΩ)@Ves=10VLow Gate Charge (Typ 154nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous RectifcationLi Battery Protect Board, Motor Drives
SW4N70L
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.8Ω)@VGS=10VLow Gate Charge (Typ 18nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW085R68E7T
SW043R15E8S
FeaturesHigh ruggednessLow RoscN (Typ 3.6mΩ)@Ves=10VLow Gate Charge (Typ 162nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery Protect Board, Motor Drive...
SW7N80P
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.45Ω)@VGS=10VLow Gate Charge (Typ 28nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW086R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 9.2mΩ)@VGS=10VLow Gate Charge (Typ 64nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Inverte...
SW2800R15ES
FeaturesHigh ruggednessLow RoscN (Typ 208mΩ)@Ves=10VLow Gate Charge (Typ 5.2nC)Improved dv/dt Capability100% Avalanche TestedApplication:TV,LED
SW6N80P
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.3Ω)@VGS=10VLow Gate Charge (Typ 20nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
