SW020R10E8S
FeaturesHigh ruggednessLow RoSoN (Typ 1.8mΩ)@Ves=10VLow Gate Charge (Typ 162nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
SW2N65B
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.2Ω)@VGS=10VLow Gate Charge (Typ 8.5nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW060R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.6mΩ)@VGS=10VLow Gate Charge (Typ 94nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
SW2N65DB
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW020R10E8S
FeaturesHigh ruggednessLow RosoN (Typ 2.2mΩ)@Ves=10VLow Gate Charge (Typ 164nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous RectificationLi Battery Protect Board, Motor Drive...
SW055R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.6mΩ)@VGS=10VLow Gate Charge (Typ 94nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
SW030R10E8S
FeaturesHigh ruggednessLow RosoN (Typ 2.9mΩ)@Ves=10VLow Gate Charge (Typ 125nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
SW7N70B
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.3Ω)@VGS=10VLow Gate Charge (Typ 24nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW066R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.6mΩ)@VGS=10VLow Gate Charge (Typ 85nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Inverte...
SW036R10E8S
FeaturesHigh ruggednessLow RosoN (Typ 3.8mΩ)@Ves=10VLow Gate Charge (Typ 85nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
SW2N70M
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.0Ω)@VGS=10VLow Gate Charge (Typ 9.5nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW062R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.2mΩ)@VGS=10VLow Gate Charge (Typ 85nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Inverte...
SW038R10VS
FeaturesHigh ruggednessLow RosoN (Typ 5.3mΩ)@Ves=4.5V(Typ 3.9mΩ)@Ves=10VLow Gate Charge (Typ 70nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Prote...
SW6N70B
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.35Ω)@VGS=10VLow Gate Charge (Typ 22nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW056R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.8mΩ)@VGS=10VLow Gate Charge (Typ 102nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
