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  • SW046R10ES SW046R10ES FeaturesHigh ruggednessLow RosoN (Typ 4.5mΩ)@Vs=10VLow Gate Charge (Typ 64nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
  • SW8N65MA SW8N65MA FeaturesHigh ruggednessLow RDS(ON) (Typ 1.04Ω)@VGS=10VLow Gate Charge (Typ 29nC)lmproved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
  • SW350R06VT SW350R06VT FeaturesHigh ruggednessLow RDS(ON) (Typ 38mΩ)@VGS=4.5V (Typ 33mΩ)@VGS=10VLow Gate Charge (Typ 21nC)Improved dv/dt Capability100% Avalanche TestedApplication: DC-DC Converter, M...
  • SW150R10VS SW150R10VS FeaturesHigh ruggednessLow RosoN (Typ 17.5mΩ)@Ves=4.5V(Typ 14.5mΩ)@Ves=10VLow Gate Charge (Typ 14.4nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery P...
  • SW8N65M SW8N65M FeaturesHigh ruggednessLow RDS(ON) (Typ 0.88Ω)@VGS=10VLow Gate Charge (Typ 32nC)lmproved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
  • SW060R65E7T SW060R65E7T FeaturesHigh ruggednessLow RDS(ON) (Typ 5.6mΩ)@VGS=10VLow Gate Charge (Typ 94nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
  • SW012R10ES SW012R10ES FeaturesHigh ruggednessLow RosoN (Typ 1.3m)@Ves=10VLow Gate Charge (Typ 201nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification.Li Battery Protect Board, Motor Drives
  • SW8N65B SW8N65B FeaturesHigh ruggednessLow RDS(ON) (Typ 0.7Ω)@VGS=10VLow Gate Charge (Typ 27nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
  • SW075R68ET SW075R68ET FeaturesHigh ruggednessLow RDS(ON) (Typ 6.9mΩ)@VGS=10VLow Gate Charge (Typ 77nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor D...
  • SW035R10ES SW035R10ES FeaturesHigh ruggednessLow RosoN (Typ 3.5mΩ)@Ves=10VLow Gate Charge (Typ 83nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
  • SW7N65M SW7N65M FeaturesHigh ruggednessLow RDS(ON) (Typ 1.2Ω)@VGS=10VLow Gate Charge (Typ 23nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
  • SW036R68E8T SW036R68E8T FeaturesHigh ruggednessLow RDS(ON) (Typ 4.2mΩ)@VGS=10VLow Gate Charge (Typ 172nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor ...
  • SW7N65DA SW7N65DA General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
  • SW046R10ES SW046R10ES FeaturesHigh ruggednessLow RosoN (Typ 4.1mΩ)@Vas=10VLow Gate Charge (Typ 65nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
  • SW029R68E8T SW029R68E8T FeaturesHigh ruggednessLow RDS(ON) (Typ 3.0mΩ)@VGS=10VLow Gate Charge (Typ 277nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor ...
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