SW050R85E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.2mΩ)@Ves=10VLow Gate Charge (Typ 47nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
SW18N65M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.35Ω)@VGS=10VLow Gate Charge (Typ 64nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW026R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.9mΩ)@VGS=4.5V (Typ 2.9mΩ)@VGS=10VLow Gate Charge (Typ 153nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
SW18N65D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW050R85E7S
FeaturesHigh ruggednessLow Rosc (Typ 4.5mΩ)@Ves=10VLow Gate Charge (Typ 77nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Inverter
SW030R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.3mΩ)@VGS=4.5V RDS(ON) (Typ 3.3mΩ)@VGS=10VLow Gate Charge (Typ 139nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificat...
SW16N65D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW050R85E7S
FeaturesHigh ruggednessLow RosoN (Typ 4.8mn)@Ves=10VLow Gate Charge (Typ 77nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Inverter
SW030R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.9mΩ)@VGS=4.5V (Typ 2.9mΩ)@VGS=10VLow Gate Charge (Typ 141nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
SW15N65D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW050R85E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.3mΩ)@Vs=10VLow Gate Charge (Typ 44nC)lImproved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification.Li Battery Protect Board, inverter
SW047R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.9mΩ)@VGS=4.5V (Typ 4.3mΩ)@VGS=10VLow Gate Charge (Typ 91nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW12N65D
Features：High ruggedness，Low RDS(ON) (Typ 0.66Ω)@VGS=10V，Low Gate Charge (Typ 41nC)，Improved dv/dt Capability，100% Avalanche Tested，Application: LED , Charger, PC Power.
SW094R10VLS
FeaturesHigh ruggednessLow RoSoN (Typ 13.3mΩ)@Ves-4.5V(Typ 10mΩ)@Ves=10VLow Gate Charge (Typ 28nC)improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification.Li Battery Prote...
SW030R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.8mΩ)@VGS=4.5V RDS(ON) (Typ 2.9mΩ)@VGS=10VLow Gate Charge (Typ 143nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificat...
