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  • SW4N65K SW4N65K FeaturesHigh ruggednessLow RDS(ON) (Typ 1Ω)@VGS=10VLow Gate Charge (Typ 13nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, Adaptor, TV-PowerGeneral DescriptionThis power MO...
  • SW043R08ES SW043R08ES Features:High ruggednessLow RosoN (Typ 4.6mΩ)@Ves=10VLow Gate Charge (Typ 48nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
  • SW065R03VLT SW065R03VLT FeaturesHigh ruggednessLow RDS(ON) (Typ 6.6mΩ)@VGS=10VLow Gate Charge (Typ 33nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor D...
  • SW15N70J SW15N70J FeaturesHigh ruggednessLow RDS(ON) (Typ 0.22Ω)@VGS=10VLow Gate Charge (Typ 29nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
  • SW036R08ES SW036R08ES General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
  • SW1N60M SW1N60M FeaturesHigh ruggednessLow RDS(ON) (Typ 7.7Ω)@VGS=10VLow Gate Charge (Typ 6nC)lmproved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is ...
  • SW040R03VLT SW040R03VLT FeaturesHigh ruggednessLow RDS(ON) (Typ 5.5mΩ)@VGS=4.5V (Typ 4.0mΩ)@VGS=10VLow Gate Charge (Typ 59nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
  • SW1N60DC SW1N60DC N-channel Enhanced mode TO-252/SOT223 MOSFETFeatures:⚫ High ruggedness⚫ Low RDS(ON) (Typ 7Ω)@VGS=10V⚫ Low Gate Charge (Typ 7nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Tested⚫ Application:Charge...
  • SW4N70K2 SW4N70K2
  • SW042R08ES SW042R08ES General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
  • SW065R03VLT SW065R03VLT FeaturesHigh ruggednessLow RDS(ON) (Typ 9.7mΩ)@VGS=4.5V(Typ 6.4mΩ)@VGS=10VLow Gate Charge (Typ 34nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery P...
  • SW601Q SW601Q General Description:The SW601Q is an N-channel power MOSFET using SAMWIN's Advanced technology to provide the customers with high switching speed.
  • SW15N80K3 SW15N80K3 FeaturesHigh ruggednessLow RDS(ON) (Typ 0.21Ω)@VGS=10VLow Gate Charge (Typ 47nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
  • SW043R85ES SW043R85ES General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
  • SW065R03VLT SW065R03VLT FeaturesHigh ruggednessLow RDS(ON) (Typ 8.7mΩ)@VGS=4.5V (Typ 5.7mΩ)@VGS=10VLow Gate Charge (Typ 34nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
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