SW050R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
SS22F~SS220F
Surface Mount Schottky Barrier RectifierReverse Voltage -20 to 200 VForward Current-2.0AFeaturesMetal silicon junction, majority carrier conductionFor surface mounted applicationsLow power loss, high ...
SW018R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.5mΩ)@VGS=4.5V (Typ 1.6mΩ)@VGS=10VLow Gate Charge (Typ 153nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
SW9N50D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW20N65K2
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.15Ω)@VGS=10VLow Gate Charge (Typ 37nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW210R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
SS22BF~SS220BF
Surface Mount Schottky Barrier RectifierReverse Voltage -20 to 200VForward Current -2.0AFEATURES*Metal silicon junction, majority carrier conduction*For surface mounted applications*Low power loss, hi...
SW020R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.1mΩ)@VGS=4.5V (Typ 2.1mΩ)@VGS=10VLow Gate Charge (Typ 145nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
SW20N65KL
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.16Ω)@VGS=10VLow Gate Charge (Typ 40nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW210R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
DS22W~DS220W
Surface Mount Schottky Barrier RectifierReverse Voltage - 20 to 200 VForward Current -2.0AFeatures*Metal silicon junction, majority carrier conduction*For surface mounted applications*Low power loss, ...
SW9N50M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.7Ω)@VGS=10VLow Gate Charge (Typ 23nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW025R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.1mΩ)@VGS=4.5V (Typ 2.8mΩ)@VGS=10VLow Gate Charge (Typ 89nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW13N65K2
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.24Ω)@VGS=10VLow Gate Charge (Typ 28nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, AdaptorGeneral DescriptionThis power MOSFET is...
SW210R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
