1N4001W~1N4007W
FEATURESFor surface mounted applicationsLow profile packageGlass Passivated Chip Junctionldeal for automated placementLead free in comply with EU RoHS 2011/65/EU directivesMECHANICAL DATACase: SOD-123...
ES1AF~ES1JF
FEATURESFor surface mounted applicationsLow profile packageGlass Passivated Chip JunctionSuperfast reverse recovery timeLead free in comply with EU RoHS 2011/65/EU directivesMECHANICAL DATACase: SMAFT...
SW051R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 7.3mΩ)@VGS=4.5V RDS(ON) (Typ 4.7mΩ)@VGS=10VLow Gate Charge (Typ 43nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificati...
SW20N50D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW8N65K3
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.55Ω)@VGS=10VLow Gate Charge (Typ 15nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SS345LF~3A45V
Surface Mount Schottky Barrier RectifierReverse Voltage-45VForward Current-3.0AFeatures*Metal silicon junction, majority carrier conduction*For surface mounted applications*Low power loss, high effici...
ES1ABF~ES1JBF
FEATURESFor surface mounted applicationsLow profile packageGlass Passivated Chip JunctionSuperfast reverse recovery timeLead free in comply with EU RoHS 2011/65/EU directivesMECHANICAL DATACase: SMBFT...
SW015R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.5mΩ)@VGS=4.5V (Typ 1.2mΩ)@VGS=10VLow Gate Charge (Typ 315nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
SW35N65KL4F
FeaturesHigh ruggednessLow RDS(ON) (Typ 95mΩ)@VGS=10VLow Gate Charge (Typ 82nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SS345BF~3A45V
Surface Mount Schottky Barrier RectifierReverse Voltage - 45VForward Current - 3.0AFeaturesMetal silicon junction, majority carrier conductionFor surface mounted applicationsLow power loss, high effic...
SW18N50M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.25Ω)@VGS=10VLow Gate Charge (Typ 70nC)lmproved dvdt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
ES1A~ES1J
FEATURES*For surface mounted applications*Low profile package*Glass Passivated Chip Junction*Superfast reverse recoverytime*Lead free in comply with EUROHS 2011/65/EU directivesMECHANICAL DATA*Case: S...
SW020R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.6mΩ)@VGS=4.5V (Typ 2.1mΩ)@VGS=10VLow Gate Charge (Typ 140nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
SW18N50D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW14N65KL4
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.24Ω)@VGS=10VLow Gate Charge (Typ 29nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
