SW014R04VLS
Semipower Technology SGT products can achieve high-frequency switching (low Rg), low conduction loss (optimal RDSon performance), low switching loss (excellent switching characteristics), and improved...
SS32F~SS320F
Surface Mount Schottky Barrier RectifierReverse Voltage - 20 to 200 VForward Current - 3.0AFeaturesMetal silicon junction, majority carrier conductionFor surface mounted applicationsLow power loss, hi...
SW016R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.1mΩ)@VGS=4.5V (Typ 1.6mΩ)@VGS=10VLow Gate Charge (Typ 201nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
SW15N50D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW11N65K3
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.34Ω)@VGS=10VLow Gate Charge (Typ 18nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW014R04VLS
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate cha...
SS32BF~SS320BF
Surface Mount Schottky Barrier RectifierReverse Voltage -20 to 200VForward Current -3.0AFEATURESMetal silicon junction, majority carrier conductionFor surface mounted applicationsLow power loss, high ...
SW017R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.9mΩ)@VGS=4.5V (Typ 2.0mΩ)@VGS=10VLow Gate Charge (Typ 150nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
SW70N65KLF
FeaturesHigh ruggednessLow RDS(ON) (Typ 35mΩ)@VGS=10VLow Gate Charge (Typ 163nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW014R04VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
DS32W~DS320W
Surface Mount Schottky Barrier RectifierReverse Voltage -20 to 200 VForward Current -3.0AFEATURESMetal silicon junction, majority carrier conductionFor surface mounted applicationsLow power loss, high...
SW13N50M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.4Ω)@VGS=10VLow Gate Charge (Typ 36nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW016R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.0mΩ)@VGS=4.5V RDS(ON) (Typ 1.4mΩ)@VGS=10VLow Gate Charge (Typ 201nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificat...
SW13N50D
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
SW20N65KL4
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.18Ω)@VGS=10VLow Gate Charge (Typ 37nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
