SW083R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
SW025R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.1mΩ)@VGS=4.5V (Typ 2.7mΩ)@VGS=10VLow Gate Charge (Typ 90nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW7N60D
▍ N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFETFeatures：⚫ High ruggedness⚫ Low RDS(ON) (Typ 1.05Ω)@VGS=10V⚫ Low Gate Charge (Typ 30nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Te...
SW7N65K2
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.57Ω)@VGS=10VLow Gate Charge (Typ 14.5nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET...
SW083R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
SW040R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.1mQ)@VGS=4.5V (Typ 3.7mΩ)@VGS=10VLow Gate Charge (Typ 59nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Recti...
SW7N65K
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.5Ω)@VGS=10VLow Gate Charge (Typ 21nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW083R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
SW4N60M
FeaturesHigh ruggednessLow RDS(ON) (Typ 2Ω)@VGS=10VLow Gate Charge (Typ 13.5nC)lmproved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW030R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.8mΩ)@VGS=4.5V (Typ 3.3mΩ)@VGS=10VLow Gate Charge (Typ 80nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW4N60D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent valanche characteristics.
SW4N65K2
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.10Ω)@VGS=10VLow Gate Charge (Typ 7.1nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, AdaptorGeneral DescriptionThis power MOSFET i...
SW052R06VS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
SW040R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.6mΩ)@VGS=4.5V (Typ 4.4mΩ)@VGS=10VLow Gate Charge (Typ 59nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW2N60DB
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
