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  • SW1N60D SW1N60D ▍N-channel Enhanced TO-251/TO-92/TO251S MOSFETFeatures⚫ High ruggedness⚫ Low RDS(ON) (Typ 6.6Ω)@VGS=10V⚫ Low Gate Charge (Typ 6.8nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Tested⚫ Applicat...
  • SW12N80K3 SW12N80K3 FeaturesHigh ruggednessLow RDS(ON) (Typ 0.3Ω)@VGS=10VLow Gate Charge (Typ 35nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
  • SW046R85E8S SW046R85E8S General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
  • SW040R03VLT SW040R03VLT FeaturesHigh ruggednessLow RDS(ON) (Typ 5.7mΩ)@VGS=4.5V (Typ 3.9mΩ)@VGS=10VLow Gate Charge (Typ 56nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
  • SW7N80K3 SW7N80K3 FeaturesHigh ruggednessLow RDS(ON) (Typ 0.54Ω)@VGS=10VLow Gate Charge (Typ 18nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
  • SW030R85E8S SW030R85E8S Features:High ruggednessLow RosoN (Typ 3.3mΩ)@Ves=10VLow Gate Charge (Typ 85nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
  • SW4N65P SW4N65P FeaturesHigh ruggednessLoW RDS(ON) (Typ 2.0Ω)@VGS=10VLow Gate Charge (Typ 15nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
  • SW065R03VLT SW065R03VLT FeaturesHigh ruggednessLow RDS(ON) (Typ 9.1mΩ)@VGS=4.5V (Typ 6.1mΩ)@VGS=10VLow Gate Charge (Typ 35nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
  • SW6N80KL SW6N80KL FeaturesHigh ruggednessLow RDS(ON) (Typ 0.72Ω)@VGS=10VLow Gate Charge (Typ 16nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
  • SW023R85E8S SW023R85E8S Features:High ruggednessLow RosoN (Typ 2.4mΩ)@Ves=10VLow Gate Charge (Typ 125nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous RectificationLi Battery Protect Board, Motor Driv...
  • SW16N65M SW16N65M FeaturesHigh ruggednessLow RDS(ON) (Typ 0.43Ω)@VGS=10VLow Gate Charge (Typ 52nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
  • SW047R04VLT SW047R04VLT FeaturesHigh ruggednessLow RDS(ON) (Typ 5.9mΩ)@VGS=4.5V (Typ 4.3mΩ)@VGS=10VLow Gate Charge (Typ 91nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
  • SW10N80K3 SW10N80K3 FeaturesHigh ruggednessLow RDS(ON) (Typ 0.40Ω)@VGS=10VLow Gate Charge (Typ 42nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
  • SW010R85E8S SW010R85E8S FeaturesHigh ruggednessLow RoscN (Typ 1.2mΩ)@Ves=10VLow Gate Charge (Typ 179nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery Protect Board, Motor Drive...
  • SW7N65C SW7N65C FeaturesHigh ruggednessLow RDS(ON) (Typ 1.2Ω)@VGS=10VLow Gate Charge (Typ 27nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
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