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Semipower High Efficiency Rectifier Diode: Creating a Greener Future
Semipower Fast Recovery Bridge Rectifier: Enhancing Efficiency and Performance
Semipower N-Channel Planar MOSFET: A Comprehensive Overview
Semipower DC-DC Converter: Working Principles
How To Choose the Right DC-DC Converters?
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MOSFET
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N-Channel SGT MOSFET (25V-250V)
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SIP Constant Voltage Power Supply Product
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DIP Wide Voltage Power Supply Product
EB TWO-WHEELER CONTROLLER
EV03 MOTOR CONTROLLERS
EV04 MOTOR CONTROLLERS
EV11 Assisted Electric Motor Controller
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MOSFET
N-Channel SGT MOSFET (25V-250V)
N-Channel Trench Mosfet (8v-200v)
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N-Channel Planar MOSFET (200v-1000v)
N-Channel Superjunction MOSFET (500v-900v)
Diode
Rectifier Diode
High Efficiency Rectifier Diode
Fast Recovery Diode
Ultrafast Recovery Diode
Schottky Diode
Zener Diode
Transient Suppression Diode
ESD Diode
Switching Diode
Low VF Schottky Diode
Small Signal Schottky Diode
Fast Recovery Bridge Rectifier
High Power Rectifier Bridge
Power Supply Module
SIP Constant Voltage Power Supply Product
SIP Wide Voltage Power Supply Product
DIP Wide Voltage Power Supply Product
Motor Drive Controller
EB TWO-WHEELER CONTROLLER
EV03 MOTOR CONTROLLERS
EV04 MOTOR CONTROLLERS
EV11 Assisted Electric Motor Controller
EV30 LOW-VOLTAGE MOTOR CONTROLLER
EV60 HIGH-VOLTAGE MOTOR CONTROLLER
EV180 HIGH-VOLTAGE MOTOR CONTROLLER
EVi5 Integrated Motor Controller
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▍N-channel Enhanced TO-251/TO-92/TO251S MOSFETFeatures⚫ High ruggedness⚫ Low RDS(ON) (Typ 6.6Ω)@VGS=10V⚫ Low Gate Charge (Typ 6.8nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Tested⚫ Applicat...
SW12N80K3
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.3Ω)@VGS=10VLow Gate Charge (Typ 35nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW046R85E8S
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
SW040R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.7mΩ)@VGS=4.5V (Typ 3.9mΩ)@VGS=10VLow Gate Charge (Typ 56nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW7N80K3
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.54Ω)@VGS=10VLow Gate Charge (Typ 18nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW030R85E8S
Features:High ruggednessLow RosoN (Typ 3.3mΩ)@Ves=10VLow Gate Charge (Typ 85nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
SW4N65P
FeaturesHigh ruggednessLoW RDS(ON) (Typ 2.0Ω)@VGS=10VLow Gate Charge (Typ 15nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW065R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 9.1mΩ)@VGS=4.5V (Typ 6.1mΩ)@VGS=10VLow Gate Charge (Typ 35nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW6N80KL
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.72Ω)@VGS=10VLow Gate Charge (Typ 16nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW023R85E8S
Features:High ruggednessLow RosoN (Typ 2.4mΩ)@Ves=10VLow Gate Charge (Typ 125nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous RectificationLi Battery Protect Board, Motor Driv...
SW16N65M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.43Ω)@VGS=10VLow Gate Charge (Typ 52nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW047R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.9mΩ)@VGS=4.5V (Typ 4.3mΩ)@VGS=10VLow Gate Charge (Typ 91nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW10N80K3
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.40Ω)@VGS=10VLow Gate Charge (Typ 42nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
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FeaturesHigh ruggednessLow RoscN (Typ 1.2mΩ)@Ves=10VLow Gate Charge (Typ 179nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery Protect Board, Motor Drive...
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FeaturesHigh ruggednessLow RDS(ON) (Typ 1.2Ω)@VGS=10VLow Gate Charge (Typ 27nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
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Address: E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
sales@samwinsemi.com
+86-755-83981818
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+86-13510292288
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