SW023R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.1mΩ)@VGS=4.5V RDS(ON) (Typ 2.4mΩ)@VGS=10VLow Gate Charge (Typ 206nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificat...
SW12N80KL
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.37Ω)@VGS=10VLow Gate Charge (Typ 28nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW030R85E8S
FeaturesHigh ruggednessLow Rose (Typ 3.1mΩ)@Ves=10VLow Gate Charge (Typ 86nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
SW18N65B
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.46Ω)@VGS=10VLow Gate Charge (Typ 43nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW023R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.1mΩ)@VGS=4.5V RDS(ON) (Typ 2.4mΩ)@VGS=10VLow Gate Charge (Typ 198nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificat...
SW10N80K2
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.58Ω)@VGS=10VLow Gate Charge (Typ 27nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneralDescriptionThis power MOSFET is...
SW046R85E8S
FeaturesHigh ruggednessLow RosoN (Typ 4.1mn)@Ves=10VLow Gate Charge (Typ 48nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
SW15N65B
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.65Ω)@VGS=10VLow Gate Charge (Typ 31nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW047R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.6mΩ)@VGS=4.5V RDS(ON) (Typ 4.1mΩ)@VGS=10VLow Gate Charge (Typ 91nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificati...
SW20N65D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW046R85E8S
FeaturesHigh ruggednessLow RosoN (Typ 4.4mn)@Ves=10VLow Gate Charge (Typ 55nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
SW026R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.7mΩ)@VGS=4.5V RDS(ON) (Typ 2.8mΩ)@VGS=10VLow Gate Charge (Typ 43nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificatio...
SW054R85E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.3mΩ)@Ves-10VLow Gate Charge (Typ 45nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery Protect Board, Motor Drives
SW20N65M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.32Ω)@VGS=10VLow Gate Charge (Typ 77nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW023R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.1mΩ)@VGS=4.5V (Typ 2.4mΩ)@VGS=10VLow Gate Charge (Typ 195nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
