SS12F~SS120F
Surface Mount Schottky Barrier RectifierReverse Voltage -20 to 200 VForward Current -1.0 AFEATURESMetal silicon junction, majority carrier conductionFor surface mounted applicationsLow power loss, hig...
SW830M
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.26Ω)@VGS=10VLow Gate Charge (Typ 14nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW030R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.4mΩ)@VGS=4.5V (Typ 3.0mΩ)@VGS=10VLow Gate Charge (Typ 79nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW830D1
▍ N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F MOSFETFeatures:⚫ High ruggedness⚫ Low RDS(ON) (Typ 1.33Ω)@VGS=10V⚫ Low Gate Charge (Typ 17nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche T...
SW14N65KL
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.25Ω)@VGS=10VLow Gate Charge (Typ 21nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW030R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
DS12W~DS120W
Surface Mount Schottky Barrier RectifierReverse Voltage -20 to 200 VForward Current -1.0 AFEATURES*Metal silicon junction, majority carrier conduction*For surface mounted applications*Low power loss, ...
SW020R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.4mΩ)@VGS=4.5V (Typ 1.9mΩ)@VGS=10VLow Gate Charge (Typ 143nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
SW11N65KL
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.33Ω)@VGS=10VLow Gate Charge (Typ 23nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW030R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
1N5817W~1N5819W
FEATURESMetal silicon junction, majority carrier conductionGuarding for overvoltage protectionLow power loss, high efficiencyHigh current capabilityLow forward voltage dropHigh surge capabilityFor use...
SW4N60TF
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.2Ω)@VGS=10VLow Gate Charge (Typ 17nC)Improved dv/dt Capability100% Avalanche TestedApplication: Power supplies, adaptorsGeneral DescriptionThis power MOSFET ...
SW040R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.0mΩ)@VGS=4.5V RDS(ON) (Typ 4.2mΩ)@VGS=10VLow Gate Charge (Typ 58nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificati...
SW10N60D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW7N65KL
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.53Ω)@VGS=10VLow Gate Charge (Typ 17nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
