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  • SW6N60K SW6N60K FeaturesHigh ruggednessLow RDS(ON) (Typ 0.72Ω)@VGS=10VLow Gate Charge (Typ 17nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, ChargerGeneral DescriptionThis power MOSFET is produced...
  • SS52F~SS520F SS52F~SS520F Surface Mount Schottky Barrier RectifierReverse Voltage -20 to 200VForward Current -5.0AFEATURESMetal silicon junction, majority carrier conductionFor surface mounted applicationsLow power loss, high ...
  • S1ABF~S1MBF S1ABF~S1MBF FEATURESFor surface mounted applicationsLow profile packageGlass Passivated Chip JunctionEasy to pick and placeLead free in comply with EU RoHS 2011/65/EU directivesMECHANICAL DATACase: SMBFTerminals:...
  • FR101W~FR107W FR101W~FR107W FEATURESFor surface mounted applicationsLow profile packageGlass Passivated Chip JunctionEasy to pick and placeFast reverse recovery timeLead free in comply with EU RoHS 2011/65/EU directivesMECHANICA...
  • ES1ALWS~ES1JLWS ES1ALWS~ES1JLWS FEATURESEasy pick and placeFor surface mounted applicationsLow profile packageBuilt-in strain reliefSuperfast recovery times for high efficiencyMECHANICAL DATACase: SOD-323Terminals: Solderable per MI...
  • SW041R03VT SW041R03VT FeaturesHigh ruggednessLow RDS(ON) (Typ 6.4mΩ)@VGS=4.5V (Typ 4.4mΩ)@VGS=10VLow Gate Charge (Typ 40nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
  • SW22N65K3F SW22N65K3F FeaturesHigh ruggednessLow RDS(ON) (Typ 0.13Ω)@VGS=10VLow Gate Charge (Typ 34nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
  • SS52BF~SS520BF SS52BF~SS520BF Surface Mount Schottky Barrier RectifierReverse Voltage -20 to 200VForward Current -5.0AFEATURESMetal silicon junction, majority carrier conductionFor surface mounted applicationsLow power loss, high ...
  • SW2N40M SW2N40M FeaturesHigh ruggednessLow RosoN (Typ 9.0Ω)@Vss=10VLow Gate Charge (Typ 2.8nC)Improved dv/dt CapabilityApplication: High frequency switching mode power supply,Electronic ballast, UPS, PFC, High power...
  • M1~M7 M1~M7 FEATURESFor surface mounted applicationsLow profile packageGlass Passivated Chip JunctionEasyto pick and placeLead free in comply with EU RoHS 2011/65/EU directivesMECHANICAL DATACase: SMAFTerminals: ...
  • ES1AL~ES1JL ES1AL~ES1JL FEATURESEasy pick and placeFor surface mounted applicationsLow profile packageBuilt-in strain reliefSuperfast recovery times for high efficiencyMECHANICAL DATACase: SOD-123FLTerminals: Solderable per ...
  • SW016R03VLT SW016R03VLT FeaturesHigh ruggednessLow RDS(ON) (Typ 2.2mΩ)@VGS=4.5V RDS(ON) (Typ 1.6mΩ)@VGS=10VLow Gate Charge (Typ 205nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificati...
  • SW5N65K3 SW5N65K3 FeaturesHigh ruggednessLow RDS(ON) (Typ 0.8Ω)@VGS=10VLow Gate Charge (Typ 10nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
  • SS52~SS520 SS52~SS520 Surface Mount Schottky Barrier RectifierReverse Voltage - 20 to 200 VForward Current - 5.0AFeatures*Metal silicon junction, majority carrier conduction*For surface mounted applications*Low power loss,...
  • SW20N50B SW20N50B FeaturesHigh ruggednessLow RDS(ON) (Typ 0.2Ω)@VGS=10VLow Gate Charge (Typ 52nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
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