SW7N65D
N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-251U/TO-252/TO-220F/TO-220SF/TO-262N/DFN5*6/TO-220FT MOSFETFeatures：⚫ High ruggedness⚫ Low RDS(ON) (Typ 1.1Ω)@VGS=10V⚫ Low Gate Charge (Typ 30nC)⚫ Imp...
SW034R10ES
FeaturesHigh ruggednessLow RosoN (Typ 3.4mΩ)@Ves=10VLow Gate Charge (Typ 82nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
SW030R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.0mΩ)@VGS=10VLow Gate Charge (Typ 262nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor ...
SW6N65D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW064R10VLS
FeaturesHigh ruggednessLow RosN (Typ 7.2mΩ)@Ves=4.5V(Typ 5.6mΩ)@Ves=10VLow Gate Charge (Typ 58nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protec...
SW046R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.6mΩ)@VGS=10VLow Gate Charge (Typ 145nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
SW064R10VLS
FeaturesHigh ruggednessLow RosoN (Typ 8.1mΩ)@Ves=4.5V(Typ 6.6mΩ)@Vas=10VLow Gate Charge (Typ 58nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification.Li Battery Prote...
SW4N65M
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.1Ω)@VGS=10VLow Gate Charge (Typ 15nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW050R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.2mΩ)@VGS=10VLow Gate Charge (Typ 129nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
SW4N65DD
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW030R10E8S
FeaturesHigh ruggednessLow RosoN (Typ 2.5mΩ)@Ves=10VLow Gate Charge (Typ 114nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
SW046R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.8mΩ)@VGS=10VLow Gate Charge (Typ 146nC)lmproved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
SW4N65D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW064R10VLS
FeaturesHigh ruggednessLow RosoN (Typ 7.2mΩ)@Ves-4.5V(Typ 5.6mΩ)@Ves=10VLow Gate Charge (Typ 58nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Prote...
SW056R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.8mΩ)@VGS=10VLow Gate Charge (Typ 107nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
