SW050R10E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.7mΩ)@Ves=10VLow Gate Charge (Typ 51nC)Improved dv/dt Capability100% Avalanche TestedApplicationSynchronous Rectification,Li Battery Protect Board, Motor Drives
SW050R10E8S
FeaturesHigh ruggednessLow Ros (Typ 5.7mA)@Ves=10VLow Gate Charge (Typ 51nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
SW6N70P2
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.6Ω)@VGS=10VLow Gate Charge (Typ 20nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW065R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.3mΩ)@VGS=10VLow Gate Charge (Typ 75nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
SW16N70D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW050R95E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.9mΩ)@Ves=10VLow Gate Charge (Typ 50nC)lmproved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery Protect Board, Motor Drives
SW068R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.8mΩ)@VGS=10VLow Gate Charge (Typ 78nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
SW038R10VS
FeaturesHigh ruggednessLow RosN (Typ 5.0mΩ)@Ves=4.5VRosc» (Typ 3.6mΩ)@Ves-10VLow Gate Charge (Typ 71nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery ...
SW16N70M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.5Ω)@VGS=10VLow Gate Charge (Typ 57nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW068R68E7T
FeaturesHigh ruggednessLow Rosom (Typ 7.1mΩ)@VGS=10VLow Gate Charge (Typ 87nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, InverterG...
SW050R95E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.4mΩ)@Ves=10VLow Gate Charge (Typ 48nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
SW12N70M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.9Ω)@VGS=10VLow Gate Charge (Typ 37nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW065R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.3mΩ)@VGS=10VLow Gate Charge (Typ 75nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Inverte...
SW12N70D
N-channel Enhanced mode TO-220F/TO-262/TO-220SF/TO-220FT MOSFETFeatures⚫ High ruggedness⚫ Low RDS(ON) (Typ 0.75Ω)@VGS=10V⚫ Low Gate Charge (Typ 47nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche T...
SW050R95E8S
FeaturesHigh ruggednessLow RosoN (Typ 6.0mΩ)@Ves=10VLow Gate Charge (Typ 48nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
