SW4N80M
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.2Ω)@VGS=10VLow Gate Charge (Typ 12nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW4N80D
N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-262N MOSFETFeatures：⚫ High ruggedness⚫ Low RDS(ON) (Typ 3.2Ω)@VGS=10V⚫ Low Gate Charge (Typ 19nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Tested...
SW046R08E9T
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.5mΩ)@VGS=10VLow Gate Charge (Typ 182nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
SW3N80D
N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFETFeatures：⚫ High ruggedness⚫ Low RDS(ON) (Typ 3.8Ω)@VGS=10V⚫ Low Gate Charge (Typ 17nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Tested⚫ Applic...
SW046R08E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.8mΩ)@VGS=10VLow Gate Charge (Typ 183nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
SW062R08E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.9mΩ)@VGS=10VLow Gate Charge (Typ 137nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
SW3N90P
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.3Ω)@VGS=10VLow Gate Charge (Typ 15nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW062R08E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.0mΩ)@VGS=10VLow Gate Charge (Typ 141nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
SW9N90P
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.3Ω)@VGS=10VLow Gate Charge (Typ 42nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW068R08E8T
FeaturesHigh ruggednessLowRDS(ON) (Typ 6.7mΩ)@VGS=10VLow Gate Charge (Typ 130nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
SW6N90M
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.8Ω)@VGS=10VLow Gate Charge (Typ 21nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW6N90D
▍ N-channel Enhanced mode TO-220F/TO-262N MOSFETFeatures：⚫ High ruggedness⚫ Low RDS(ON) (Typ 1.8Ω)@VGS=10V⚫ Low Gate Charge (Typ 42nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Tested⚫ Applicatio...
SW070R08E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 7.2mΩ)@VGS=10VLow Gate Charge (Typ 109nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
SW068R08E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.7mΩ)@VGS=10VLow Gate Charge (Typ 128nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor ...
SW078R08E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.7mΩ)@VGS=10VLow Gate Charge (Typ 128nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor ...
