Semipower Fast Recovery Bridge Rectifier: Enhancing Efficiency and Performance
In the rapidly evolving world of electronics, the demand for high-performance and efficient components is ever-increasing. Fast recovery bridge rectifiers are pivotal in ensuring the smooth and effici...
DS32W~DS320W
Surface Mount Schottky Barrier RectifierReverse Voltage -20 to 200 VForward Current -3.0AFEATURESMetal silicon junction, majority carrier conductionFor surface mounted applicationsLow power loss, high...
SW13N50M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.4Ω)@VGS=10VLow Gate Charge (Typ 36nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
High Power Rectifier Bridge
New Energy Automobile
As society prioritizes environmental concerns, lightweight electric drive transportation is replacing oil-driven options. SEMIPOWER’s SW low and medium voltage series MOSEFTs offer reliable, eco-friendly power solutions for battery protection in electric drive systems.
SW016R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.0mΩ)@VGS=4.5V RDS(ON) (Typ 1.4mΩ)@VGS=10VLow Gate Charge (Typ 201nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificat...
SW13N50D
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
SW20N65KL4
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.18Ω)@VGS=10VLow Gate Charge (Typ 37nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
TO-3P High Voltage Mosfet Switching Circuit
BrandSAMWINMountingThrough HolePins3Weight(typ.)4600(mg)Packing MethodTube Packaging / Bag PackagingMinimum Quantity25 pcs/Tube 50 pcs/BagPackage Dimensions
Warmly Welcome GLC Team to Semipower
GLC visited Semipower on March7th, 2019.The core technology of the GLC team is the development and production of GaN-on-Si, GaN-on-SiC epitaxial wafers, and related chip design.The GLC team has master...
Automotive Electronics Market Begins to Recover
The decline in the automotive electronics market has bottomed out in the first quarter, paving the way for its return to year-on-year growth in 2010.After a dismal 2008 and the first quarter of this y...
SW050R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
Semipower N-Channel Planar MOSFET: A Comprehensive Overview
In the realm of modern electronics, the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a cornerstone component, essential for a wide range of applications from power management to signa...
SS22F~SS220F
Surface Mount Schottky Barrier RectifierReverse Voltage -20 to 200 VForward Current-2.0AFeaturesMetal silicon junction, majority carrier conductionFor surface mounted applicationsLow power loss, high ...
SW018R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.5mΩ)@VGS=4.5V (Typ 1.6mΩ)@VGS=10VLow Gate Charge (Typ 153nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
