SW9N50D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW20N65K2
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.15Ω)@VGS=10VLow Gate Charge (Typ 37nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
Big News for Semipower in 2019!
3D printing globalmanufacturing center invested by Semipower is settled in ChongqingAs an investor, Semipower, in cooperation with RECTECH and HP Corporationof the United States, established the globa...
Two Major Benefits Promote the Rapid Growth of Electronic Components
Opportunities and Challenges:First, industrial policy supportSecond, the traction of industry recoveryMarket data:The overall dynamic PE of the electronic components industry is close to 55 times, alm...
SW210R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
Semipower DC-DC Converter: Working Principles
DC-DC converters are indispensable in modern electronics, enabling efficient power management and conversion across various applications. Semipower, a renowned brand in the semiconductor industry, off...
SS22BF~SS220BF
Surface Mount Schottky Barrier RectifierReverse Voltage -20 to 200VForward Current -2.0AFEATURES*Metal silicon junction, majority carrier conduction*For surface mounted applications*Low power loss, hi...
SW020R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.1mΩ)@VGS=4.5V (Typ 2.1mΩ)@VGS=10VLow Gate Charge (Typ 145nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
SW20N65KL
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.16Ω)@VGS=10VLow Gate Charge (Typ 40nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
Semipower Attended IC China 2018
The First Global IC EntrepreneurConference, whose theme is “Open for development Cooperate for win-win” wasopened on Dec. 11, 2018 and guided by Ministry of Industry and InformationTechnology, Shang...
Samsung Electronics Takes the Lead in Mass Production of 40nm DDR3 DRAM
On July 21, Samsung Electronics announced that it has begun mass production of 40nm 2Gb DDR3 Dram. This is the first time in the world that this level of product has entered mass production. At the sa...
SW210R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
How To Choose the Right DC-DC Converters?
DC-DC converters are essential components in modern electronic systems, enabling efficient power management and conversion. Semipower, a leading brand in the semiconductor industry, offers a variety o...
DS22W~DS220W
Surface Mount Schottky Barrier RectifierReverse Voltage - 20 to 200 VForward Current -2.0AFeatures*Metal silicon junction, majority carrier conduction*For surface mounted applications*Low power loss, ...
SW9N50M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.7Ω)@VGS=10VLow Gate Charge (Typ 23nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
