SW065R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 9.7mΩ)@VGS=4.5V(Typ 6.4mΩ)@VGS=10VLow Gate Charge (Typ 34nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery P...
SW601Q
General Description:The SW601Q is an N-channel power MOSFET using SAMWIN's Advanced technology to provide the customers with high switching speed.
SW15N80K3
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.21Ω)@VGS=10VLow Gate Charge (Typ 47nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
Great Wall Development Review Team Visits Semipower
On the morning of July 24, 2018, three people from the Great Wall Development Review Team, including Purchasing Manager Ms. Shi Feifei, R&D Manager Ms. Sheng Zhonglin, and Test Manager Mr. Hu Guan...
SW043R85ES
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
SW065R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 8.7mΩ)@VGS=4.5V (Typ 5.7mΩ)@VGS=10VLow Gate Charge (Typ 34nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW1N60D
▍N-channel Enhanced TO-251/TO-92/TO251S MOSFETFeatures⚫ High ruggedness⚫ Low RDS(ON) (Typ 6.6Ω)@VGS=10V⚫ Low Gate Charge (Typ 6.8nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Tested⚫ Applicat...
SW12N80K3
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.3Ω)@VGS=10VLow Gate Charge (Typ 35nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
School-Enterprise Cooperation, Joint Training
On April 16, 2018, Xi’an Xinpai Electronic Technology Co., Ltd.'s College Student Joint Training Base welcomed a new batch of students for student internship courses here. They are 25 students in th...
SW046R85E8S
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
SW040R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.7mΩ)@VGS=4.5V (Typ 3.9mΩ)@VGS=10VLow Gate Charge (Typ 56nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW7N80K3
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.54Ω)@VGS=10VLow Gate Charge (Typ 18nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
Semipower Won the '2018 China IC Design Achievement Award for Outstanding Market Performance Award: Automotive Electronics'
AspenCore, the world's largest media group in the field of electronic technology, grandly held the "2018 China IC Leadership Summit and China IC Design Achievement Award Ceremony" at the...
SW030R85E8S
Features:High ruggednessLow RosoN (Typ 3.3mΩ)@Ves=10VLow Gate Charge (Typ 85nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
SW4N65P
FeaturesHigh ruggednessLoW RDS(ON) (Typ 2.0Ω)@VGS=10VLow Gate Charge (Typ 15nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
