SW023R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.1mΩ)@VGS=4.5V (Typ 2.4mΩ)@VGS=10VLow Gate Charge (Typ 195nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
The Director-General of Xi'an Science and Technology Bureau Led the Leaders of the High-Tech Division and the Intellectual Property Division to Visit and Guide the Work
On December 21, 2017, Semipower invited Gao Jiping, deputy director of Xi'an Science and Technology Bureau, Wang Bin, director of the High-tech Departm ent, and Li Jianxun, deputy director of the I...
SW050R85E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.2mΩ)@Ves=10VLow Gate Charge (Typ 47nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
SW18N65M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.35Ω)@VGS=10VLow Gate Charge (Typ 64nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW026R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.9mΩ)@VGS=4.5V (Typ 2.9mΩ)@VGS=10VLow Gate Charge (Typ 153nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
SW18N65D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Xi'an Power Device Testing and Application Center Reliability Laboratory Testing Capabilities Expanded
In December 2017, in order to achieve a more stringent pursuit of product quality, meet customers' high reliability requirements for products, improve automotive-grade product certification test p...
SW050R85E7S
FeaturesHigh ruggednessLow Rosc (Typ 4.5mΩ)@Ves=10VLow Gate Charge (Typ 77nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Inverter
SW030R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.3mΩ)@VGS=4.5V RDS(ON) (Typ 3.3mΩ)@VGS=10VLow Gate Charge (Typ 139nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificat...
SW16N65D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Fulfill Corporate Social Responsibility and Convey the Warmth of Student Aid
When our children can learn all kinds of information about the world in front of the computer without leaving home, when our children can easily buy the books they want to read at bookstalls and newss...
SW050R85E7S
FeaturesHigh ruggednessLow RosoN (Typ 4.8mn)@Ves=10VLow Gate Charge (Typ 77nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Inverter
SW030R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.9mΩ)@VGS=4.5V (Typ 2.9mΩ)@VGS=10VLow Gate Charge (Typ 141nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
SW15N65D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Semipower Appears at IC China 2017
On October 25, the annual event China International Semiconductor Expo and Summit Forum (IC China 2017) opened grandly at the Shanghai New International Expo Center. As an international professional e...
