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  • SW065R03VLT SW065R03VLT FeaturesHigh ruggednessLow RDS(ON) (Typ 9.1mΩ)@VGS=4.5V (Typ 6.1mΩ)@VGS=10VLow Gate Charge (Typ 35nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
  • SW6N80KL SW6N80KL FeaturesHigh ruggednessLow RDS(ON) (Typ 0.72Ω)@VGS=10VLow Gate Charge (Typ 16nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
  • Semipower: Start Again for Love Semipower: Start Again for Love Children, children in childhood, should be the treasures in the hands of parents. Childhood is beautiful, and children should be innocent, lively, and carefree.Most of the more than 100 students in Du...
  • SW023R85E8S SW023R85E8S Features:High ruggednessLow RosoN (Typ 2.4mΩ)@Ves=10VLow Gate Charge (Typ 125nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous RectificationLi Battery Protect Board, Motor Driv...
  • SW16N65M SW16N65M FeaturesHigh ruggednessLow RDS(ON) (Typ 0.43Ω)@VGS=10VLow Gate Charge (Typ 52nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
  • SW047R04VLT SW047R04VLT FeaturesHigh ruggednessLow RDS(ON) (Typ 5.9mΩ)@VGS=4.5V (Typ 4.3mΩ)@VGS=10VLow Gate Charge (Typ 91nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
  • SW10N80K3 SW10N80K3 FeaturesHigh ruggednessLow RDS(ON) (Typ 0.40Ω)@VGS=10VLow Gate Charge (Typ 42nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
  • Don't Forget Your Original Intention and Forge Ahead Don't Forget Your Original Intention and Forge Ahead On February 11, the Xi'an Investment Cooperation Committee grandly held the "New Era, New Economy, New Xi'an - Xi'an 2017 Investment Promotion Work Briefing and Investment Ambassador ...
  • SW010R85E8S SW010R85E8S FeaturesHigh ruggednessLow RoscN (Typ 1.2mΩ)@Ves=10VLow Gate Charge (Typ 179nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery Protect Board, Motor Drive...
  • SW7N65C SW7N65C FeaturesHigh ruggednessLow RDS(ON) (Typ 1.2Ω)@VGS=10VLow Gate Charge (Typ 27nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
  • SW023R04VLT SW023R04VLT FeaturesHigh ruggednessLow RDS(ON) (Typ 3.1mΩ)@VGS=4.5V RDS(ON) (Typ 2.4mΩ)@VGS=10VLow Gate Charge (Typ 206nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificat...
  • SW12N80KL SW12N80KL FeaturesHigh ruggednessLow RDS(ON) (Typ 0.37Ω)@VGS=10VLow Gate Charge (Typ 28nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
  • Xi'an Intellectual Property Service Center Came to Our Company for On-Site Investigation Xi'an Intellectual Property Service Center Came to Our Company for On-Site Investigation In order to build Xi'an's hard technology strength, expand Xi'an's hard technology brand, improve the hard technology industry ecosystem, and realize the conversion of new and old driv...
  • SW030R85E8S SW030R85E8S FeaturesHigh ruggednessLow Rose (Typ 3.1mΩ)@Ves=10VLow Gate Charge (Typ 86nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
  • SW18N65B SW18N65B FeaturesHigh ruggednessLow RDS(ON) (Typ 0.46Ω)@VGS=10VLow Gate Charge (Typ 43nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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