SW4N65D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Semipower Explores New Business Directions for Wireless Charging
Wireless charging, also known as induction charging and non-contact induction charging, uses near-field induction, that is, inductive coupling, to transmit energy from the charger to the electrical de...
SW064R10VLS
FeaturesHigh ruggednessLow RosoN (Typ 7.2mΩ)@Ves-4.5V(Typ 5.6mΩ)@Ves=10VLow Gate Charge (Typ 58nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Prote...
SW056R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.8mΩ)@VGS=10VLow Gate Charge (Typ 107nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
Mr. Li Chenguang, CTO of Yonglian Technology, Personally Visited Xi'an Semipower to Conduct Product Quality Control Research
On March 6, Mr. Li Chenguang, CTO of Yonglian Technology (stock code: 834160), made a special visit to Xi'an Semipower Electronic Technology Co., Ltd. and conducted a detailed on-site investigatio...
SW020R10E8S
FeaturesHigh ruggednessLow RoSoN (Typ 1.8mΩ)@Ves=10VLow Gate Charge (Typ 162nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
SW2N65B
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.2Ω)@VGS=10VLow Gate Charge (Typ 8.5nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW060R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.6mΩ)@VGS=10VLow Gate Charge (Typ 94nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
SW2N65DB
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
CASA Standards Committee Established - 'Core' Opportunities and 'Core' Development
In the spring of Budize, all things are shining. The early spring of February quietly comes to us, and Xiaoxin also ushered in his spring. His "core" opportunity, "core" developmen...
SW020R10E8S
FeaturesHigh ruggednessLow RosoN (Typ 2.2mΩ)@Ves=10VLow Gate Charge (Typ 164nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous RectificationLi Battery Protect Board, Motor Drive...
SW055R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.6mΩ)@VGS=10VLow Gate Charge (Typ 94nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
Shenzhen Megmeet Company Visited Semipower
At the beginning of the new year, Xiaoxin, which has always welcomed guests and friends from all over the world, has welcomed a new partner - Shenzhen Megmeet. As the saying goes, no single thread can...
SW030R10E8S
FeaturesHigh ruggednessLow RosoN (Typ 2.9mΩ)@Ves=10VLow Gate Charge (Typ 125nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
SW7N70B
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.3Ω)@VGS=10VLow Gate Charge (Typ 24nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
